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Enhancing secondary yield of a diamond amplifier using a nitrogen layer

At a Glance

Section titled “At a Glance”
MetadataDetails
Publication Date2015-06-01
JournalJournal of Applied Physics
AuthorsKevin L. Jensen, J. L. Shaw, J. E. Yater, Bradford B. Pate
InstitutionsUnited States Naval Research Laboratory
Citations6

Abstract

Section titled “Abstract”

A thin nitrogen-doped layer less than 4% of the total thickness in diamond thin film amplifier is shown to reduce losses of generated secondaries to the back contact, generated by a high energy primary electron beam compared to a thin film without the substitutional nitrogen layer modification. Simulation indicates that the losses due to absorption of diffusing electrons by the back contact may be considerably reduced by a factor of 2 (depending on field across the film, width of the nitrogen layer, and boron doping level), thereby mitigating undesirable effects associated with trace amounts of boron.

Tech Support

Section titled “Tech Support”

Original Source

Section titled “Original Source”

References

Section titled “References”
  1. 1958 - Solid State Physics: Advances in Research and Applications
  2. 2006 - Proceedings of the 2006 IEEE International Vacuum Electronics Conference Held Jointly with 2006 IEEE International Vacuum Electron Sources

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