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6CCVD Research

Computer simulation of the heat distribution element for high-power microwave transistors

At a Glance

Section titled “At a Glance”
MetadataDetails
Publication Date2015-07-01
JournalRussian Microelectronics
AuthorsI. A. Glinskii, N. V. Zenchenko
InstitutionsRussian Academy of Sciences
Citations7

Abstract

Section titled “Abstract”

A simulation procedure is proposed that allows one to find temperature distributions in electronic devices and to evaluate thermal resistances for the whole device and for its individual structural elements. The results of calculating the temperature distribution in a multifinger high-power microwave transistor (HP-MWT) are presented. In the case of the model under study, it is found that placing a heat distribution element (HDE) made of polycrystalline CVD diamond between the crystal and the heat sink reduces the total thermal resistance of the transistor structure and decreases the overheat of the structure by approximately 2%. For the model of the multifinger HP-MWT, the dependences of the thermal resistance on the thickness and width of the HDE are obtained. The HDE size optimal in terms of the minimum thermal resistance of the structure is found to be 6000 × 6000 × 800 μm. For the model of the multifinger HP-MWT with the HDE, the maximum temperatures in the area of heat release are compared for various values of convection. Natural air convection is found to be sufficient for heat remove.

Tech Support

Section titled “Tech Support”

Original Source

Section titled “Original Source”

References

Section titled “References”
  1. 2014 - Nano-Mikrosist. Tekh.
  2. 2014 - Nano-Mikrosist. Tekh.
  3. 2014 - Nano-Mikrosist. Tekh.

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