Fabrication of diamond lateral p–n junction diodes on (111) substrates
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2015-07-14 |
| Journal | physica status solidi (a) |
| Authors | Kazuki Sato, Takayuki Iwasaki, M. Shimizu, Hiromitsu Kato, Toshiharu Makino |
| Institutions | Tokyo Institute of Technology, Japan Science and Technology Agency |
| Citations | 7 |
Abstract
Section titled “Abstract”Diamond lateral p-n junctions were fabricated on (111) substrates by selective growth of n‐type diamond around a p‐type layer. We investigated the effects of both the step‐flow growth direction of n‐type diamond and the crystal face of the p‐type sidewalls on the structure and electrical properties of the lateral p-n junctions. The direction of the step‐flow growth clearly influenced the morphologies of the p-n junctions. We also found that the crystal faces of the p‐type sidewalls had an effect on the quality of the lateral p-n junctions. The two facing p-n junctions obtained in this study becomes an n-p-n structure, which could be a key structure for metal‐oxide‐semiconductor field‐effect transistors with an inversion channel.