Homoepitaxial diamond film growth - High purity, high crystalline quality, isotopic enrichment, and single color center formation
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2015-10-21 |
| Journal | physica status solidi (a) |
| Authors | Tokuyuki Teraji, Takashi Yamamoto, Kenji Watanabe, Yasuo Koide, Junichi Isoya |
| Institutions | UniversitÀt Ulm, University of Stuttgart |
| Citations | 95 |
Abstract
Section titled âAbstractâWith optical/electronic devices of the next generation in mind, we provide a guideline for the growth of homoepitaxial diamond films that possess higher crystalline quality, higher chemical purity, and a higher carbon isotopic ratio. A customâbuilt microwave plasmaâassisted chemical vapor deposition system was constructed to achieve these requirements. To improve both the purity and crystalline quality of homoepitaxial diamond films, an advanced growth condition was applied: higher oxygen concentration in the growth ambient. Under this growth condition for highâquality diamond, a thick diamond film of â„30 ÎŒm was deposited reproducibly while maintaining high purity and a flat surface. Then, combining this advanced growth condition for nonâdoped diamond with a unique doping technique that provides partsâperâbillion order doping, singleâcolor centers of either nitrogenâvacancy or siliconâvacancy centers that show excellent properties were formed. The new idea of using these color centers as a probe for detecting tiny amounts of impurities was presented. These advanced growth and characterization techniques are expected to open up new fields of diamond research that require extremely lowâimpurity concentration, for use in power devices and quantum information devices.