On the models used for TCAD simulations of Diamond Schottky Barrier Diodes
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2015-10-01 |
| Authors | Nazareno Donato, Marina Antoniou, Ettore Napoli, G.A.J. Amaratunga, Florin Udrea |
| Institutions | University of Naples Federico II, University of Cambridge |
| Citations | 13 |
Abstract
Section titled āAbstractāIn this paper we present a numerical analysis of Schottky Barrier Diodes (SBDs) based on CVD (Chemical Vapour Deposition) Diamond. Material and interface models suitable for TCAD (Technology Computer Aided Design) finite element simulations were implemented in the software and their validity was assessed against experimental results obtained on MIP+(Metal-Intrinsic layer-highly P doped substrate) SBDs with Al and Au as Schottky metal contacts both at room and higher temperature conditions. The paper also highlights the need to improve such TCAD models since the complex behavior of Diamond based devices is still not well captured in static and dynamic conditions. The present work also discusses the role of the Oxygen surface interface in the on state performances of the SBDs.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 1999 - A Unified Analytical Model for Bulk and Surface Mobility in Si n-and p-Channel MOSFETās