Thermal Management of Hotspots Using Diamond Heat Spreader on Si Microcooler for GaN Devices
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2015-10-08 |
| Journal | IEEE Transactions on Components Packaging and Manufacturing Technology |
| Authors | Yong Han, Boon Long Lau, Gongyue Tang, Xiaowu Zhang |
| Institutions | Agency for Science, Technology and Research, Institute of Microelectronics |
| Citations | 44 |
Abstract
Section titled āAbstractāA diamond heat spreader has been applied on the hybrid Si microcooler for the improvement of the hotspots cooling capability for GaN devices. The microwave chemical vapor deposition diamond heat spreader under tests is of thickness 400 Ī¼m and thermal conductivity as high as 1500 ~ 2000 W/mK, and is bonded through the thermal compression bonding process at chip level. Eight hotspots, each of size 450 Ć 300 Ī¼m <sup xmlns:mml=āhttp://www.w3.org/1998/Math/MathMLā xmlns:xlink=āhttp://www.w3.org/1999/xlinkā>2</sup> , were fabricated on a Si thermal test chip to mimic the heating areas of eight GaN units. Heat dissipation capabilities were studied and compared through experimental tests and thermal/fluid simulations, and consistent results have been obtained. Using the diamond heat spreader, to dissipate 70-W heating power, the maximum chip temperature can be reduced by 40.4% and 27.3%, compared with the structure without a heat spreader and the one with a copper heat spreader, respectively. While maintaining the maximum hotspot temperature under 160Ā°C, 10-kW/cm <sup xmlns:mml=āhttp://www.w3.org/1998/Math/MathMLā xmlns:xlink=āhttp://www.w3.org/1999/xlinkā>2</sup> hotspot heat flux can be dissipated. The thermal effects of the heat spreader thickness, the diamond thermal conductivity, and the bonding layer are investigated. Based on the simulation results, the higher power density of the GaN device can be dissipated, while maintaining the peak gate temperature under 200Ā°C. The concentrated heat flux has been effectively reduced using a diamond heat spreader, and much better cooling capability of the Si microcooler has been achieved for high-power GaN devices.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 2007 - Performance-cost optimization of a diamond heat spreader