[Optical Spectroscopy for High-Pressure Microwave Plasma Chemical Vapor Deposition of Diamond Films].
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2015-11-01 |
| Journal | PubMed |
| Authors | Wei Cao, Zhibin Ma |
| Citations | 1 |
Abstract
Section titled āAbstractāPolycrystalline diamond growth by microwave plasma chemical vapor deposition (MPCVD) at high-pressure (34.5 kPa) was investigated. The CHā/Hā/Oāplasma was detected online by optical emission spectroscopy (OES), and the spatial distribution of radicals in the CHā/Hā/Oāplasma was studied. Raman spectroscopy was employed to analyze the properties of the diamond films deposited in different oxygen volume fraction. The uniformity of diamond films quality was researched. The results indicate that the spectrum intensities of Cā, CH and HĪ± decrease with the oxygen volume fraction increasing. While the intensity ratios of Cā, CH to HĪ± also reduced as a function of increasing oxygen volume fraction. It is shown that the decrease of the absolute concentration of carbon radicals is attributed to the rise volume fraction of oxygen, while the relative concentration of carbon radicals to hydrogen atom is also reducing, which depressing the growth rate but improving the quality of diamond film. Furthermore, the OH radicals, role of etching, its intensities increase with the increase of oxygen volume fraction. Indicated that the improvement of OH concentration is also beneficial to reduce the content of amorphous carbon in diamond films. The spectrum space diagnosis results show that under high deposition pressure the distribution of the radicals in the CHā/Hā/Oāplasma is inhomogeneous, especially, that of radical Cā gathered in the central region. And causing a rapid increase of non-diamond components in the central area, eventually enable the uneven distribution of diamond films quality.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal Sourceā- DOI: None