Thermal characteristics of diamond film coatings for GaN HEMT devices
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2015-11-01 |
| Authors | Raoul Guggenheim, Jonathan A. Rothschild, Lior Rodes, A. Hoffman |
| Institutions | Technion ā Israel Institute of Technology, Rafael Advanced Defense Systems (Israel) |
| Citations | 4 |
Abstract
Section titled āAbstractāDiamond as a heat spreading film for Gallium Nitride (GaN) based devices has been proposed. For the successful integration and heat management, these films need to exhibit high in-plane thermal conductivity. We present a measurement method based on the laser flash method for thin films below 10 Ī¼m. The method uses free-standing diamond films on a silicon frame. The method has been used to show the high thermal conductivity of thin diamond films.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 1994 - A Proposed Novel Application of Thin Overlay Diamond Films for Improved Thermal Management Budget of Short Gate High Power Devices
- 0 - Measurements of Thermal Conductivity and Thermal Diffusivity of CVD Diamond [Crossref]