Tunable single hole regime of a silicon field effect transistor in standard CMOS technology
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2015-12-11 |
| Journal | Applied Physics Express |
| Authors | Marco Turchetti, Harald Homulle, Fabio Sebastiano, Giorgio Ferrari, Edoardo Charbon |
| Institutions | Institut polytechnique de Grenoble, Delft University of Technology |
| Citations | 6 |
Abstract
Section titled āAbstractāAbstract The electrical properties of a Single Hole Field Effect Transistor (SH-FET) based on CMOS technology are analyzed in a cryogenic environment. Few electron-hole Coulomb diamonds are observed using quantum transport spectroscopy measurements, down to the limit of single hole transport. Controlling the hole filling of the SH-FET is made possible by biasing the top gate, while the bulk contact is employed as a back gate that tunes the hole state coupling with the contacts and their distance from the interface. We compare the cryogenic Coulomb blockade regime with the room temperature regime, where the device operation is similar to that of a standard p-MOSFET.