Assembly of a high-dielectric constant thin TiOx layer directly on H-terminated semiconductor diamond
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2016-01-04 |
| Journal | Applied Physics Letters |
| Authors | Jing Zhao, Jiangwei Liu, Liwen Sang, Meiyong Liao, David Coathup |
| Institutions | National Institute for Materials Science, Aston University |
| Citations | 32 |
Abstract
Section titled āAbstractāA high-dielectric constant (high-k) TiOx thin layer was fabricated on hydrogen-terminated diamond (H-diamond) surface by low temperature oxidation of a thin titanium layer in ambient air. The metallic titanium layer was deposited by sputter deposition. The dielectric constant of the resultant TiOx was calculated to be around 12. The capacitance density of the metal-oxide-semiconductor (MOS) based on the TiOx/H-diamond was as high as 0.75 Ī¼F/cm2 contributed from the high-k value and the very thin thickness of the TiOx layer. The leakage current was lower than 10ā13 A at reverse biases and 10ā7A at the forward bias of ā2 V. The MOS field-effect transistor based on the high-k TiOx/H-diamond was demonstrated. The utilization of the high-k TiOx with a very thin thickness brought forward the features of an ideally low subthreshold swing slope of 65 mV per decade and improved drain current at low gate voltages. The advantages of the utilization high-k dielectric for diamond metal-oxide semiconductor field effect transistors are anticipated.