Crack Distribution and Strength of Silicon Wafers Considering the Crystallographic Orientation of the Silicon Ingot in Diamond Wire Sawing Process
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2016-01-01 |
| Journal | 32nd European Photovoltaic Solar Energy Conference and Exhibition |
| Authors | Stephan Schoenfelder, R. Koepge, C. H. Klute |
Abstract
Section titled āAbstractāThe mechanical properties and the failure of silicon wafers are defined by surface defects, like cracks. In the wire sawing process different wire types and particle sizes as well as the machine settings affects the quality of the wafer surface. In order to optimize wire sawing technologies the influence of the crystallographic orientation on the strength and crack distribution of silicon wafers is investigated in this work. By ball-on-ring-tests the fracture strength of different orientations was determined and compared to the crack distribution, which was investigated by bevel polished method. The results show that a rotation of the silicon crystal by 45Ā° (<110> direction) leads to an increase of the crack density in the surface of the samples and a decrease in the fracture strength of the wafers in comparisons to the standard sawing orientation (<100> direction).