Energetics of carbon and nitrogen impurities and their interactions with vacancy in vanadium
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2016-01-01 |
| Journal | 中国物理B：英文版 |
| Authors | 华娟, 刘悦林, 李恒帅, 赵明文, 刘向东 |
Abstract
Section titled “Abstract”We studied the energetic behaviors of interstitial and substitution carbon(C)/nitrogen(N) impurities as well as their interactions with the vacancy in vanadium by first-principles simulations. Both C and N impurities prefer the octahedral site(O-site). N exhibits a lower formation energy than C. Due to the hybridization between vanadium-d and N/C-p, the N-p states are located at the energy from-6.00 e V to-5.00 e V, which is much deeper than that from-5.00 e V to-3.00 e V for the C-p states. Two impurities in bulk vanadium, C-C, C-N, and N-N can be paired up at the two neighboring Osites along the 111 direction and the binding energies of the pairs are 0.227 e V, 0.162 e V, and 0.201 e V, respectively.Further, we find that both C and N do not prefer to stay at the vacancy center and its vicinity, but occupy the O-site off the vacancy in the interstitial lattice in vanadium. The possible physical mechanism is that C/N in the O-site tends to form a carbide/nitride-like structure with its neighboring vanadium atoms, leading to the formation of the strong C/N-vanadium bonding containing a covalent component.
Tech Support
Section titled “Tech Support”Original Source
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