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6CCVD Research

Simple Low-Temperature GaN/Diamond Bonding Process with an Atomically Thin Intermediate Layer

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2023-07-25
JournalACS Applied Nano Materials
AuthorsTakashi Matsumae, Sho Okita, Shoya Fukumoto, Masanori Hayase, Yuichi Kurashima
InstitutionsTokyo University of Science, National Institute of Advanced Industrial Science and Technology
Citations15

Abstract

Section titled ā€œAbstractā€

We demonstrated the low-temperature bonding of GaN and diamond substrates using wet chemical treatments. The GaN and diamond surfaces treated with HCl and NH4OH/H2O2 solutions, respectively, could adhere to each other by contact under atmospheric conditions. After annealing at 200 Ā°C, they were bonded with a shear strength of 8.19 MPa. Interfacial observations revealed that the GaN and diamond crystallines were bonded through an āˆ¼3 nm-thick amorphous layer consisting of Ga, O, and sp2-C. The proposed bonding process consists of wet chemical treatment followed by low-temperature annealing under atmospheric conditions. As this simple process enables GaN/diamond integration without adhesive layers, it would contribute to future high-power and high-frequency GaN devices integrated on the diamond heat spreader.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
  1. 2014 - 2014 lester eastman Conference on high performance devices (LEC)

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