Synthesis and Field Emission Properties of Diamond Microcrystalline
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2016-01-01 |
| Journal | Dianzi qijian |
| Authors | Gao Jinha |
| Institutions | Zhengzhou University |
Abstract
Section titled āAbstractāThe diamond microcrystalline films was fabricated by microwave plasma chemical vapor deposition(MP-CVD)method. The ceramic with a Ti mental layer was used as substrate. The fabricated diamond was evaluated byRaman scattering spectroscopy,X-ray diffraction spectrum(XRD),scanning electron microscopy(SEM). The fieldemission properties were tested by using a diode structure in a vacuum. A phosphor-coated indium tin oxide(ITO)anode was used for observing and characterizing the field emission. It was found that the diamond microcrystallinefilms exhibited good electron emission properties. The turn-on field was only 1.15 V/Ī¼m,and emission current den-sity as high as 0.81 m A/cm2 was obtained under an applied field of 3.35 V/Ī¼m. The field emission properties of thediamond microcrystalline films are discussed relating to microstructure and electrical conductivity.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal Sourceā- DOI: None