Spectroscopy of defects in HPHT and CVD diamond by ESR and pulsed photo-ionization measurements
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2016-01-14 |
| Journal | Journal of Instrumentation |
| Authors | E. Gaubas, T. Äeponis, D. MeÅ”kauskaite, R. Grigonis, Valdas Sirutkaitis |
| Institutions | Vilnius University |
| Citations | 3 |
Abstract
Section titled āAbstractāSynthetic diamond is one of the most promising wide band-gap materials for fabrication of solar-blind photo-sensors and radiation tolerant particle detectors. However, defects introduced during crystal growth and processing, causing carrier trapping and recombination, limit the functional characteristics of devices made of this material. In order to reveal the predominant defects, pulsed photo-ionization (PPI), Fourier transform infrared (FTIR) and electron spin resonance (ESR) spectroscopic measurements have been performed on diamond samples grown by chemical vapor deposition (CVD) and high pressure-high temperature (HPHT) methods. Measured photo-activation energies have been assigned to point defects associated with nitrogen and nickel impurities as well as to their complexes involving vacancies.