Heteroepitaxial growth of cubic boron nitride films on diamond(001) substrates and theirn-type doping
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2016-02-26 |
| Journal | Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE |
| Authors | Hong Yin |
| Institutions | Jilin University, Jilin Medical University |
Abstract
Section titled āAbstractāThis paper firstly introduces c-BN in general and its excellent properties that make c-BN a promising candidate competing with diamond as hard coating and as a future high temperature semiconductor material. Furthermore, this paper gives an overview of the recent advances of the different synthetic techniques towards the heteroepitaxial growth of c-BN films. In the end, it will describe the state of the art of <i>n</i>-type doping of these c-BN epitaxial films through which a c-BN/diamond <i>pn</i> diode can be anticipated.