Novel microwave plasma-assisted CVD reactor for diamond delta doping
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2016-02-02 |
| Journal | physica status solidi (RRL) - Rapid Research Letters |
| Authors | A. L. Vikharev, Š. Š. ŠŠ¾ŃŠ±Š°ŃŠµŠ², M. A. Lobaev, A. B. Muchnikov, D.B. Radishev |
| Institutions | Institute for Physics of Microstructures, Institute of Applied Physics |
| Citations | 53 |
Abstract
Section titled āAbstractāWe report on building a novel chemical vapor deposition (CVD) reactor for diamond delta-doping. The main features of our reactor are: a) the use of rapid gas switching system, (b) the reactor design providing the laminar gas flow. These features provide the creation of ultra-sharp interfaces between doped and undoped material and minimize the prolonged ātailsā formation in the doping profile. It is proved by optical emission spectroscopy that gas switching time is not more than 10 seconds. Using the novel reactor we have grown the nanometer-thin layers of boron doped diamond. The FWHM of boron concentration profile is about 2 nm which is proved by SIMS. It is shown that the both single delta-layer and multiple delta-layers could be grown using the novel CVD reactor. In principle, the reactor could be used for diamond delta doping with other dopants, like nitrogen, phosphorus etc. (Ā© 2016 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)