Influence of substrate misorientation on the surface morphology of homoepitaxial diamond (111) films
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2016-03-18 |
| Journal | physica status solidi (a) |
| Authors | Norio Tokuda, Masahiko Ogura, Tsubasa Matsumoto, Satoshi Yamasaki, Takao Inokuma |
| Institutions | National Institute of Advanced Industrial Science and Technology, Kanazawa University |
| Citations | 13 |
Abstract
Section titled âAbstractâWe studied the influence of misorientation angles and directions of single crystal diamond (111) substrates on the surface morphology of homoepitaxial diamond (111) films grown by microwave plasmaâenhanced chemical vapor deposition (CVD) in the anisotropic lateral growth mode. Hillocks were completely suppressed on the diamond (111) films grown by CVD on the substrates with misorientation angles of 2° and 4°, while hillocks were formed on the CVDâgrown diamond (111) films on the substrates with misorientation angles of 0° and 1°. In addition, an atomically flat diamond (111) film was grown on the substrate with a misorientation angle of 2° toward the direction, while rough films were grown on the substrate with a misorientation angle of 2° toward the direction.