Preparation of diamond-like carbon films using reactive Ar/CH4 high power impulse magnetron sputtering system with negative pulse voltage source for substrate
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2016-03-03 |
| Journal | Japanese Journal of Applied Physics |
| Authors | Takashi Kimura, Hikaru Kamata |
| Institutions | Nagoya Institute of Technology |
| Citations | 5 |
Abstract
Section titled āAbstractāAbstract Diamond-like carbon films were prepared using a reactive Ar/CH 4 high-power impulse magnetron sputtering system with a negative pulse voltage source for the substrate, changing the CH 4 fraction up to 15% in the total pressure range from 0.3 to 2 Pa. The magnitude of the negative pulse voltage for the substrate was also varied up to about 500 V. The hardness of films monotonically increased with increasing magnitude of the negative pulse voltage. The films with hardnesses between 16.5 and 23 GPa were prepared at total pressures less than 0.5 Pa and CH 4 fractions less than 10% by applying an appropriate negative pulse voltage of 300-400 V. In X-ray photoelectron spectroscopy, the area ratio C-C sp 3 /(C-C sp 2 + C-C sp 3 ) in the C 1s core level was higher than 30% at pressures less than 0.5 Pa and CH 4 fractions less than 15%. On the other hand, the films with hardnesses between 5 and 10 GPa were prepared with a relatively high growth rate at the partial pressures of CH 4 higher than 0.1 Pa. However, the observation of the photoluminescence background in Raman spectroscopy indicated a relatively high hydrogen content.