Correlated structural and electronic phase transformations in transition metal chalcogenide under high pressure
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2016-04-04 |
| Journal | Journal of Applied Physics |
| Authors | Chunyu Li, Feng Ke, Qingyang Hu, Zhenhai Yu, Jinggeng Zhao |
| Institutions | Carnegie Institution for Science, Harbin Institute of Technology |
| Citations | 7 |
Abstract
Section titled āAbstractāHere, we report comprehensive studies on the high-pressure structural and electrical transport properties of the layered transition metal chalcogenide (Cr2S3) up to 36.3 GPa. A structural phase transition was observed in the rhombohedral Cr2S3 near 16.5 GPa by the synchrotron angle dispersive X-ray diffraction measurement using a diamond anvil cell. Through in situ resistance measurement, the electric resistance value was detected to decrease by an order of three over the pressure range of 7-15 GPa coincided with the structural phase transition. Measurements on the temperature dependence of resistivity indicate that it is a semiconductor-to-metal transition in nature. The results were also confirmed by the electronic energy band calculations. Above results may shed a light on optimizing the performance of Cr2S3 based applications under extreme conditions.