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6CCVD Research

A 200 mW InP DHBT W-band power amplifier in transferred-substrate technology with integrated diamond heat spreader

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2016-05-01
AuthorsThualfiqar Al-Sawaf, Ksenia Nosaeva, Nils Weimann, Viktor Krozer, W. Heinrich
InstitutionsFerdinand-Braun-Institut
Citations7

Abstract

Section titled ā€œAbstractā€

A power amplifier in 800 nm transferred-substrate InP DHBT technology is presented in this paper. The technology used in this work features an integrated diamond heat sink layer that has significant impact on the reduction of thermal resistance. This increases the DC-power limit as well as RF output power for the same transistor periphery. The power amplifier delivers 200 mW output power at 87 GHz, for a total emitter periphery of 96 Ī¼m, at a peak PAE of 20 % and for more than 25 GHz 3-dB bandwidth.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
  1. 2014 - An 81 GHz, 470 mW, 1.1 mm2 InP HBT Power Amplifier with 4: 1 Series Power Combining using Sub-quarter-wavelength Baluns
  2. 2014 - High Efficiency W-band Power Amplifier using Ring-shaped sub-quarter-wavelength power combining tchnique
  3. 2013 - Modelling of InP HBTs in Transferred-Substrate Technology for Millimeter-Wave Applications
  4. 2012 - W-band Amplifier with 8 dB gain based on InP HBT Transferred-Substrate technology

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