Effect of Boron Doping on the CVD Growth Rate of Diamond
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2016-05-03 |
| Journal | The Journal of Physical Chemistry C |
| Authors | Yiming Zou, Karin Larsson |
| Institutions | Uppsala University |
| Citations | 25 |
Abstract
Section titled “Abstract”The purpose of the present study has been to theoretically investigate the effect of boron doping on the diamond growth rate. The most frequently observed diamond surface planes (100), (111), and (110) were thereby carefully investigated using density functional theory calculations under periodic boundary conditions. It was shown that both the thermodynamic and kinetic aspects of the diamond growth process will be severely affected by the B dopant (as compared with the nondoped situations). More specifically, the results showed that B (positioned within the second atomic C layer) will cause an enhancement in the growth rate. On the other hand, the effect of B positioned in the other atomic C layers showed a decreased growth rate. These observations did not only correlate with experimental results but did also explain the anomalous variations in the diamond growth rate (i.e., either increase or decrease) with B doping.