(Invited) High Power Diamond Devices with 2-D Transport Channels
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2017-08-17 |
| Journal | ECS Transactions |
| Authors | David I. Shahin, A. Christou, J. E. Butler |
| Institutions | TechLab (United States), Euclid Techlabs (United States) |
| Citations | 1 |
Abstract
Section titled âAbstractâThis paper addresses the fabrication, radiation induced defects and device characteristics of microwave power field effect transistors (FETs) built on 1) high quality diamond surfaces exploiting the 2 dimensional delta channel conductivity, and 2) the surface two dimensional âhydrogen terminatedâ conduction layer in diamond single crystals grown by CVD.