Formation of Nitrogen-Vacancy Centers in Homoepitaxial Diamond Thin Films Grown via Microwave Plasma-Assisted Chemical Vapor Deposition
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2016-05-09 |
| Journal | IEEE Transactions on Nanotechnology |
| Authors | Hideyuki Watanabe, Hitoshi Umezawa, T. Ishikawa, Kazuki Kaneko, Shinichi Shikata |
| Institutions | Keio University, The University of Tokyo |
| Citations | 5 |
Abstract
Section titled “Abstract”A model for controlling the two-dimensional distribution of negatively charged nitrogen-vacancy (NV <sup xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>-</sup> ) fluorescent centers near the surface of a diamond crystal is presented, using only a microwave plasma-assisted chemical vapor deposition (CVD) method. In this approach, a CVD diamond layer is homoepitaxialy grown via microwave plasma-assisted CVD using an isotopically enriched methane ( <sup xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>12</sup> CH4), hydrogen (H2), and nitrogen (N2) gas mixture on patterned diamond (0 0 1). When the surface is imaged by means of confocal microscope photoluminescence mapping, fine grooves are observed to have been generated artificially on the diamond surface. NV <sup xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>-</sup> centers are found to be distributed selectively into these grooves. These results demonstrate an effective means for the formation of NV <sup xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>-</sup> centers of selectable size and density via microwave plasma-assisted CVD, with potential application in the production of diamond quantum sensors.
Tech Support
Section titled “Tech Support”Original Source
Section titled “Original Source”References
Section titled “References”- 2002 - High-quality homoepitaxial diamond film growth