Strong and Tunable Spin–Orbit Coupling in a Two-Dimensional Hole Gas in Ionic-Liquid Gated Diamond Devices
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2016-05-17 |
| Journal | Nano Letters |
| Authors | Golrokh Akhgar, O. Klochan, L. H. Willems van Beveren, Mark T. Edmonds, Florian Maier |
| Institutions | Monash University, UNSW Sydney |
| Citations | 50 |
Abstract
Section titled “Abstract”Hydrogen-terminated diamond possesses due to transfer doping a quasi-two-dimensional (2D) hole accumulation layer at the surface with a strong, Rashba-type spin-orbit coupling that arises from the highly asymmetric confinement potential. By modulating the hole concentration and thus the potential using an electrostatic gate with an ionic-liquid dielectric architecture the spin-orbit splitting can be tuned from 4.6-24.5 meV with a concurrent spin relaxation length of 33-16 nm and hole sheet densities of up to 7.23 × 10(13) cm(-2). This demonstrates a spin-orbit interaction of unprecedented strength and tunability for a 2D hole system at the surface of a wide band gap semiconductor. With a spin relaxation length that is experimentally accessible using existing nanofabrication techniques, this result suggests that hydrogen-terminated diamond has great potential for the study and application of spin transport phenomena.