Theoretical analysis of substrate effects on the DC performance of AlGaN/GaN high electron mobility transistor
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2016-05-01 |
| Authors | Abu Syed, Md. Jannatul Islam, S. M. Hasanuzzaman, Amit Kumer Podder, Md. Sherajul Islam |
| Institutions | Khulna University of Engineering and Technology |
| Citations | 3 |
Abstract
Section titled āAbstractāThis paper reports the theoretical analysis of substrate (Sapphire, Si, SiC, Diamond) effects on the saturation drain current and transconductance of Al. <inf xmlns:mml=āhttp://www.w3.org/1998/Math/MathMLā xmlns:xlink=āhttp://www.w3.org/1999/xlinkā>27</inf> Ga. <inf xmlns:mml=āhttp://www.w3.org/1998/Math/MathMLā xmlns:xlink=āhttp://www.w3.org/1999/xlinkā>73</inf> N/GaN high-electron mobility transistor using analytical approach. This model includes polar optical phonon scattering, source-drain resistance and self-heating effects with a wide temperature ranges. It is found that substrates have significant effects on the dc performance of AlGaN/GaN HEMT. The model reports very good performance of HEMT fabricated on Diamond substrate due to its excellent thermal conductivity properties and a comparative analysis of the performance on different substrates at high voltage level is presented.