Evaluation of the origin of excited states appeared in small Si single-electron transistors
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2016-06-01 |
| Authors | Takafumi Uchida, Masashi Arita, Akira Fujiwara, Yasuo Takahashi, Mingyu Jo |
| Institutions | NTT Basic Research Laboratories, Hokkaido University |
Abstract
Section titled āAbstractāSingle electron transistors (SETs) have attracted attention not only to the transistor function but also their interesting characteristics. We reported that the negative conductance appeared in Coulomb diamond characteristics of silicon based SETs made by pattern dependent oxidation. This is attributable to the excited states in the quantum dot. However, it is necessary to consider the effect of electrostatic energy level in electron reservoir such as source and drain electrodes because the portion of the electrodes near the quantum dot is similar with the dot in size. In this study, we fabricated two SETs with a different structure, and investigated the influence of the energy level in small source and drain electrodes on the negative conductance.