Demonstration of RF-DC conversion using dual diode rectifier circuit for rectenna with diamond Schottky barrier diodes
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2016-06-01 |
| Authors | Toshiyuki Oishi, Naoto Kawano, Makoto Kasu |
| Institutions | Saga University |
| Citations | 1 |
Abstract
Section titled āAbstractāDual diode rectifier circuits with two diamond Schottky barrier diodes (SBDs) for a rectifying antenna (rectenna) were fabricated for RF to DC conversion. A feature of diamond SBD structures is double NO <sub xmlns:mml=āhttp://www.w3.org/1998/Math/MathMLā xmlns:xlink=āhttp://www.w3.org/1999/xlinkā>2</sub> hole doping layers in order to form low Ohmic contact resistance and increase concentration of two dimensional hole gas at diamond surface. SBDs have good rectifier properties with on/off ratio larger than 5 orders. High current density of 24 A/cm <sup xmlns:mml=āhttp://www.w3.org/1998/Math/MathMLā xmlns:xlink=āhttp://www.w3.org/1999/xlinkā>2</sup> was obtained at the forward voltage of -2 V. A dual diode rectifier circuit with two diamond SBDs was constructed by selecting values of circuit components such as DC block capacitance and load resistance to make output voltage larger. In experimental, DC output voltage as large as 4 V was obtained for RF input voltage with 10 MHz and amplitude of 9 V.