GaN HEMTs with multi-functional p-diamond back-barriers
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2016-06-01 |
| Authors | Yuhao Zhang, TomƔs Palacios, Koon Hoo Teo |
| Institutions | Mitsubishi Electric (United States), Massachusetts Institute of Technology |
| Citations | 1 |
Abstract
Section titled āAbstractāThis work for the first time explores the use of p-diamond as multi-functional back-barriers in GaN high electron mobility transistors (HEMTs). A well-calibrated self-consistent electro-thermal simulation has revealed that multi-functional p-diamond back-barriers can improve the performance of HEMTs, by achieving over 3 times higher breakdown voltage (BV), at least 30% higher thermal performance, enhanced 2DEG confinement and reduced short channel effects. These results indicate the great potential of the integration of GaN and diamond electronics for high-power and high-frequency applications.