Prospects for Gallium Nitride-on-Diamond Transistors

At a Glance

Metadata	Details
Publication Date	2016-10-01
Authors	J. D. Blevins, G. D. Via
Institutions	United States Air Force Research Laboratory
Citations	5

Abstract

Strategies aimed at improving the near junction heat removal of Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are presently limiting GaN device technology from realization of its true capability [1]. Approximately ten years ago, Cree demonstrated AlGaN/GaN HEMTs with power densities exceeding 40 W/mm [2]. Control of the GaN junction temperature requires integration of thermal transport solutions near the heat source to ensure optimal performance and reliable operation [3]. An approach under consideration is the use of Chemical Vapor Deposition (CVD) polycrystalline diamond inserted within microns of the device junction. Recent AFRL and Defense Advanced Research Projects Agency (DARPA) efforts have shown that replacing the epitaxial host substrate with high thermal conductivity polycrystalline diamond substrates can improve the GaN HEMT areal power density >3Xs [4-9]. This paper will examine the motivation behind the use of diamond, integration approaches, material/device results and key technological challenges going forward.

Tech Support

Original Source

DOI: https://doi.org/10.1109/csics.2016.7751059

References

2015 - GaN-on-Diamond HEMTs with 11W/mm Output Power at 10GHz
2015 - Development of a Diamond Based Intrachip Cooling Technology for GaN
2014 - Analysis and Characterization of Thermal Transport in GaN HEMTs on SiC and Diamond Substrates
2013 - GaN HEMT Near Junction Heat Removal
2013 - A New High Power GaN-on-Diamond HEMT with Low-Temperature Bonded Substrate Technology