Skip to content
6CCVD Research

Optical and electronic properties of sub-surface conducting layers in diamond created by MeV B-implantation at elevated temperatures

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2016-06-13
JournalJournal of Applied Physics
AuthorsL. H. Willems van Beveren, Rong Liu, H.C. Bowers, Kumaravelu Ganesan, Brett C. Johnson
InstitutionsThe University of Melbourne, Western Sydney University
Citations14

Abstract

Section titled ā€œAbstractā€

Boron implantation with in-situ dynamic annealing is used to produce highly conductive sub-surface layers in type IIa (100) diamond plates for the search of a superconducting phase transition. Here, we demonstrate that high-fluence MeV ion-implantation, at elevated temperatures avoids graphitization and can be used to achieve doping densities of 6 at. %. In order to quantify the diamond crystal damage associated with implantation Raman spectroscopy was performed, demonstrating high temperature annealing recovers the lattice. Additionally, low-temperature electronic transport measurements show evidence of charge carrier densities close to the metal-insulator-transition. After electronic characterization, secondary ion mass spectrometry was performed to map out the ion profile of the implanted plates. The analysis shows close agreement with the simulated ion-profile assuming scaling factors that take into account an average change in diamond density due to device fabrication. Finally, the data show that boron diffusion is negligible during the high temperature annealing process.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
  1. 2008 - Constraints on Tc for superconductivity in heavily boron-doped diamond [Crossref]
  2. 2004 - Superconductivity in diamond [Crossref]
  3. 2004 - Dependence of the superconducting transition temperature on the doping level in single-crystalline diamond films [Crossref]
  4. 2004 - Superconductivity in diamond thin films well above liquid helium temperature [Crossref]
  5. 2007 - Superconducting properties of homoepitaxial CVD diamond [Crossref]
  6. 2009 - Superconductivity in CVD diamond films [Crossref]
  7. 2010 - Critical concentrations of superconductor to insulator transition in (111) and (001) CVD boron-doped diamond [Crossref]
  8. 2006 - Superconductivity and low temperature electrical transport in B-doped CVD nanocrystalline diamond [Crossref]
  9. 2015 - Signature of high Tc around 25 K in high quality superconducting diamond [Crossref]
  10. 2008 - Absence of superconductivity in boron-implanted diamond [Crossref]

Reads Similar to This

Impact of charge conversion on NV-center relaxometry Control of normally on/off characteristics in hydrogenated diamond metal-insulator-semiconductor field-effect transistors Properties of planar structures based on Policluster films of diamond and AlN