Si(C≡C)4-Based Single-Crystalline Semiconductor - Diamond-like Superlight and Superflexible Wide-Bandgap Material for the UV Photoconductive Device
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2016-06-23 |
| Journal | ACS Applied Materials & Interfaces |
| Authors | Mingjun Sun, Xinrui Cao, Zexing Cao |
| Institutions | Institute of Theoretical Physics, Xiamen University |
| Citations | 24 |
Abstract
Section titled “Abstract”A wide-bandgap SiC4 semiconductor with low density and high elasticity has been designed and characterized by ab initio molecular dynamics simulations and first-principles calculations. The through-space conjugation among the d orbitals of Si and the π* orbitals of ethynyl moieties can remarkably enhance the photoconductivity. This new-type superlight and superflexible semiconductor is predicted to have unique electronic, optical, and mechanical properties, and it is a quite promising material for the high-performance UV optoelectronic devices suitable for various practical demands in a complex environment.