Boosting the MOSFETs matching by using diamond layout style
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2016-08-01 |
| Authors | Vinicius Vono Peruzzi, Christian Renaux, Denis Flandre, Salvador Pinillos Gimenez |
| Institutions | UCLouvain, Centro UniversitƔrio FEI |
| Citations | 7 |
Abstract
Section titled āAbstractāThis paper performs an experimental comparative study of the Metal-Oxide-Semiconductor Silicon-On-Insulator (SOI) Field Effect Transistors (MOSFETs) matching, which are implemented with the hexagonal gate geometry (Diamond) and classical rectangular one. Some of the main analog parameters of 360 devices are investigated. The results demonstrate that the Diamond SOI MOSFETs with Ī± angles equal to 53.1Ā° and 90Ā° are capable of boosting in more than 20% the devices matching in comparison to those observed in the typical rectangular SOI MOSFETs, regarding the same gate area and bias conditions. Therefore, the Diamond layout style is an alternative technique to reduce the MOSFETsā mismatching regarding the analog SOI CMOS ICs applications.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 2014 - Invited paper: Innovative Layout Styles to Boost the Mosfet Electrical Performance
- 2014 - Using Diamond Layout Style to Boost MOSFET Frequency Response of Analogue IC. Electronics Letters