Full band Monte Carlo simulation of impact ionization in wide bandgap semiconductors based on ab initio calculation
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2016-09-01 |
| Authors | Yoshinari Kamakura, Ryusei Fujita, K. Konaga, Yoshiki Ueoka, Nobuya Mori |
| Institutions | Tottori University, The University of Osaka |
| Citations | 5 |
Abstract
Section titled “Abstract”A full band Monte Carlo simulation based on ab initio calculations is presented to investigate high-field carrier transport characteristics. The band structure and the impact ionization rate of wide bandgap semiconductors are calculated based on a quasiparticle selfconsistent GW method. Then, we demonstrate the full band Monte Carlo simulation in diamond to investigate the electron and hole ionization coefficients. It is shown that the estimated breakdown fields are in good agreement with the experimental data of n <sup xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>+</sup> p <sup xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>-</sup> one-sided abrupt junctions with the acceptor density less than 10 <sup xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>17</sup> cm <sup xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>-3</sup> .