Skip to content
6CCVD Research

Elimination of Leakage in GaN-on-Diamond

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2016-10-01
AuthorsBrian Alvarez, Daniel Francis, Firooz Faili, Frank Lowe, Daniel J. Twitchen
InstitutionsUniversity of Sheffield, Element Six (United States)
Citations5

Abstract

Section titled ā€œAbstractā€

The use of chemical vapor deposition diamond as a substrate for gallium nitride (GaN) to form GaN- on-diamond has the potential to allow for higher linear power densities in GaN high electron mobility transistors (HEMTs). The increase in GaN HEMT power density on diamond has been limited to date by the electrical leakage in GaN-on-diamond substrates. In this paper we show that to eliminate buffer leakage in silicon based GaN-on- diamond, you have to completely remove the transition layers used to grow high quality GaN on the original host silicon. By completely removing the transition layers in GaN-on-diamond, we demonstrated buffer leakage comparable to the leakage in GaN on silicon carbide.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
  1. 0 - Gallium Nitride (GaN) versus Silicon Carbide (SiC) In The High Frequency (RF) and Power Switching Applications
  2. 2013 - AIGaN/GaN HEMTs on Diamond Substrate with over 7 W/mm Output Power Density at 10GHz [Crossref]
  3. 0 - GaN-on-Diamond Wafers: A Progress Report
  4. 2007 - Fabrication & Characterization of GaN-on-Diamond HEMTs
  5. 2013 - Improved thermal interfaces of GaN-diamond composite substrates for HEMT Applications [Crossref]

Reads Similar to This

Managing Heat with Diamond - the Example of Diamond/GaN HEMTs (Electronics and Photonics Division Award) High Power Nitride Based Field Effect Transistors Thermal Analysis of THz Schottky Diode Chips with Single and Double-Row Anode Arrangement