Selection rules in the excitation of the divacancy and the nitrogen-vacancy pair in 4H- and 6H-SiC
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2024-06-03 |
| Journal | Physical review. B./Physical review. B |
| Authors | Danial Shafizadeh, Joel Davidsson, Takeshi Ohshima, Igor A. Abrikosov, NguyĂȘn TiĂȘn SĂłn |
| Institutions | Linköping University, Tohoku University |
| Citations | 11 |
Abstract
Section titled âAbstractâIn this study, we address selection rules with respect to the polarization of the optical excitation of two color centers in <a:math xmlns:a=âhttp://www.w3.org/1998/Math/MathMLâ><a:mn>4</a:mn><a:mi>H</a:mi><a:mtext>â</a:mtext><a:mi>SiC</a:mi></a:math> and <b:math xmlns:b=âhttp://www.w3.org/1998/Math/MathMLâ><b:mn>6</b:mn><b:mi>H</b:mi><b:mtext>â</b:mtext><b:mi>SiC</b:mi></b:math> with potential for applications in quantum technology, the divacancy and the nitrogen-vacancy pair. We show that the photoluminescence of the axial configurations of higher symmetry <c:math xmlns:c=âhttp://www.w3.org/1998/Math/MathMLâ><c:mo>(</c:mo><c:msub><c:mi>C</c:mi><c:mrow><c:mn>3</c:mn><c:mi>v</c:mi></c:mrow></c:msub><c:mo>)</c:mo></c:math> than the basal ones <d:math xmlns:d=âhttp://www.w3.org/1998/Math/MathMLâ><d:mo>(</d:mo><d:msub><d:mi>C</d:mi><d:mrow><d:mn>1</d:mn><d:mi>h</d:mi></d:mrow></d:msub><d:mo>)</d:mo></d:math> can be canceled using any excitation (resonant or nonresonant) with polarization parallel to the crystal axis <e:math xmlns:e=âhttp://www.w3.org/1998/Math/MathMLâ><e:mrow><e:mo>(</e:mo><e:msub><e:mi>E</e:mi><e:mi>L</e:mi></e:msub><e:mrow><e:mo>|</e:mo><e:mo>|</e:mo></e:mrow><e:mi>c</e:mi><e:mo>)</e:mo></e:mrow></e:math>. The polarization selection rules are determined using group-theoretical analysis and simple physical arguments showing that phonon-assisted absorption with <f:math xmlns:f=âhttp://www.w3.org/1998/Math/MathMLâ><f:mrow><f:msub><f:mi>E</f:mi><f:mi>L</f:mi></f:msub><f:mrow><f:mo>|</f:mo><f:mo>|</f:mo></f:mrow><f:mi>c</f:mi></f:mrow></f:math> is prohibited despite being formally allowed by group theory. A comparison with the selection rules for the silicon vacancy, another defect with <g:math xmlns:g=âhttp://www.w3.org/1998/Math/MathMLâ><g:msub><g:mi>C</g:mi><g:mrow><g:mn>3</g:mn><g:mi>v</g:mi></g:mrow></g:msub></g:math> symmetry, is also carried out. Using the selection rules, we demonstrate selective excitation of only one basal divacancy configuration in <h:math xmlns:h=âhttp://www.w3.org/1998/Math/MathMLâ><h:mn>4</h:mn><h:mi>H</h:mi><h:mtext>â</h:mtext><h:mi>SiC</h:mi></h:math>, the PL3 line, and discuss the higher contrast and increased Debye-Waller factor in the selectively excited spectrum. Published by the American Physical Society 2024