Graphene grown out of diamond
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2016-10-17 |
| Journal | Applied Physics Letters |
| Authors | Changzhi Gu, Wuxia Li, Jing Xu, Shicong Xu, Chao LĆ¼ |
| Institutions | Rensselaer Polytechnic Institute, Renmin University of China |
| Citations | 21 |
Abstract
Section titled āAbstractāMost applications of graphene need a suitable support substrate to present its excellent properties. But transferring graphene onto insulators or growing graphene on foreign substrates could cause properties diminishing. This paper reports the graphene growth directly out of diamond (111) by B doping, guided by first-principles calculations. The spontaneous graphene formation occurred due to the reconstruction of the diamond surface when the B doping density and profile are adequate. The resulting materials are defect free with high phase purity/carrier mobility, controllable layer number, and good uniformity, which can be potentially used directly for device fabrication, e.g., high-performance devices requiring good thermal conductivity.