Characterization of insulated-gate bipolar transistor temperature on insulating, heat-spreading polycrystalline diamond substrate
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2016-12-05 |
| Journal | Japanese Journal of Applied Physics |
| Authors | Hitoshi Umezawa, Shinichi Shikata, Y. Kato, Yoshiaki Mokuno, Akinori Seki |
| Institutions | National Institute of Advanced Industrial Science and Technology, Toyota Motor Corporation (Japan) |
| Citations | 4 |
Abstract
Section titled āAbstractāAbstract Polycrystalline diamond films have been utilized as direct bonding aluminum (DBA) substrates to improve cooling efficiency. A diamond film with a high quality factor was characterized by Raman spectroscopy and showed a high thermal conductivity of more than 1800 W m ā1 K ā1 and a low leakage current, even at an applied bias of 3 kV, because of the suppression of electrical conduction through the grain boundaries. The operating temperatures of Insulated-gate bipolar transistors (IGBTs) on diamond DBAs were 20-28% lower than those on AlN DBAs. The thermal resistivity of the diamond DBA module was 0.32 Ā°C/W. The uniformity of the temperature distribution on a diamond DBA was excellent.