Development Status of New Material Power Devices
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2016-12-31 |
| Journal | IEEJ Transactions on Electronics Information and Systems |
| Authors | Noriyuki Iwamuro, Akira Bandoh, Koji Yano, Tetsuya Miyazawa, Hiroomi Eguchi |
| Institutions | University of Yamanashi, Renesas Electronics (United States) |
| Citations | 5 |
Abstract
Section titled āAbstractāEfficiency and controllability of power electronics is highly affected by power device performances, such as low on-resistance and high speed switching. In recent years, SiC, GaN, and diamond are expected to be used for making superior power devices, since Si device performance is approaching the material limit. In this paper, we review recent advances of the new material devices, by picking up some papers presented in power-device related conferences and journals.