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Laser Cutting Out Process for Semiconductor Crystal Material Applying Laser Slicing Method

MetadataDetails
Publication Date2017-01-01
JournalJournal of the Japan Society for Precision Engineering
AuthorsYohei Yamada, Yohei Kaneko, Riku Aoki, Junichi Ikeno, Hideki Suzuki
Citations2

We propose a new high precision, high quality laser cutting process for semiconductor substrates such as Si, SiC and diamond. According to this method, micro cracks are introduced inside the material by appropriate focusing of the laser beam. A scanning laser beam, then, connects the cracks so as to realize three dimensional cutting. In this paper, we focus on the effects of laser energy, laser pitch and spherical aberration on the shape of the micro cracks. High quality laser cutting is achieved by forming minute and uniform cracks regardless of the crystal orientation and heating produced. In order to ascertain the three dimensional cutting process, cutting out with round chamfering is realized.