Dynamic properties of diamond high voltage p–i–n diodes
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2017-03-16 |
| Journal | Japanese Journal of Applied Physics |
| Authors | Aboulaye Traoré, Akira Nakajima, Toshiharu Makino, Daisuke Kuwabara, Hiromitsu Kato |
| Institutions | University of Tsukuba, Japan Science and Technology Agency |
| Citations | 10 |
Abstract
Section titled “Abstract”The switching characteristics of a diamond p+-i-n+ diode have been investigated to highlight the reverse recovery phenomenon, which is a consequence of the base conductivity modulation. The electrical transport within a diamond p+-i-n+ diode is still unclear, and the effectiveness of the base conductivity modulation remains the main concern. The measured turn-off waveforms of the diamond p+-i-n+ diode showed reverse recovery, thus confirming its bipolar nature. The diamond p+-i-n+ diode exhibits soft recovery and very fast switching behaviors (the recovery time was less than 200 ns). Moreover, according to the switching conditions, the reverse recovery in the diamond p+-i-n+ diode may induce a turn-off failure, which is ascribed to the well-known dynamic avalanche breakdown.