Fabrication of thin diamond membranes by using hot implantation and ion-cut methods
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2017-03-06 |
| Journal | Applied Physics Letters |
| Authors | Jaekwon Suk, Hyeongkwon Kim, Weon Cheol Lim, Jiwon Yune, Sung Moon |
| Institutions | Korea Institute of Science & Technology Information, Yonsei University |
| Citations | 12 |
Abstract
Section titled āAbstractāA thin (2 Ī¼m) and relatively large area (3 Ć 3 mm2) diamond membrane was fabricated by cleaving a surface from a single crystal chemical vapor deposition (CVD) diamond wafer (3 Ć 3 mm2Ć 300 Ī¼m) using a hot implantation and ion-cut method. First, while maintaining the CVD diamond at 400 Ā°C, a damage zone was created at a depth of 2.3 Ī¼m underneath the surface by implanting 4 MeV carbon ions into the diamond in order to promote membrane cleavage (hot implantation). According to TEM data, hot implantation reduces the thickness of the implantation damage zone by about a factor of 10 when compared to implanting carbon ions with the CVD diamond at room temperature (RT). In order to recover crystallinity, the implanted sample was then annealed at 850 Ā°C. Next, 380 keV hydrogen ions were implanted into the sample to a depth of 2.3 Ī¼m below the surface with the CVD diamond at RT. After annealing at 850 Ā°C, the CVD diamond surface layer was cleaved at the damage-zone due to internal pressure from H2 gas arising from the implanted hydrogen (ion-cut). A thin layer of graphite (ā¼300 nm) on the cleavage surface, arising from the implanted carbon, was removed by O2 annealing. This technique can potentially be used to produce much larger area membranes of variable thickness.