High Voltage Diodes in Diamond Using (100)- and (111)- Substrates
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2017-03-10 |
| Journal | IEEE Electron Device Letters |
| Authors | Maitreya Dutta, Franz A. Koeck, Wenwen Li, R. J. Nemanich, Srabanti Chowdhury |
| Institutions | University of California, Davis, Arizona State University |
| Citations | 39 |
Abstract
Section titled āAbstractāWe present a comparative study of PIN structures in diamond on type IIa (100)- and type IIb (111)-oriented bulk diamond substrates. An 8.5-Ī¼m thick i-layer demonstrated a blocking voltage>1kV for the (100)-oriented diamond sample without any mesa isolation, passivation, or edge termination structures. PIN diodes with a 530nm thick drift region, on the (111)-sample, demonstrated a blocking voltage of 207V at a current level of 1A/cm <sup xmlns:mml=āhttp://www.w3.org/1998/Math/MathMLā xmlns:xlink=āhttp://www.w3.org/1999/xlinkā>2</sup> with a corresponding blocking electric field of 3.9MV/cm. A deep ultraviolet light emission was observed only in (111)-diodes under forward bias, confirming well-behaved p-n junction characteristics in (111) as compared to (100).
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 2014 - Diamond electronic devices fabricated using heavily doped hopping p+ and n+ layers [Crossref]