Diamond Field Effect Transistors With MoO3Gate Dielectric
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2017-04-18 |
| Journal | IEEE Electron Device Letters |
| Authors | Zeyang Ren, Jinfeng Zhang, Jincheng Zhang, Chunfu Zhang, Shengrui Xu |
| Institutions | Xidian University |
| Citations | 89 |
Abstract
Section titled āAbstractāWe report the first attempt of the diamond MOSFETs with MoO <sub xmlns:mml=āhttp://www.w3.org/1998/Math/MathMLā xmlns:xlink=āhttp://www.w3.org/1999/xlinkā>3</sub> dielectric directly deposited on H-diamond surface preserving atmospheric-adsorbate-induced 2DHG. The transistors with 4-Ī¼m gate show a transconductance of 29 mS/mm and an ON-resistance of 75.25 Ī© Ā· mm at |VGS - VTH| = 2.2 V, respectively. The effective mobility is extracted to be 108 cm <sub xmlns:mml=āhttp://www.w3.org/1998/Math/MathMLā xmlns:xlink=āhttp://www.w3.org/1999/xlinkā>2</sub> /(Vs) from the relationship between the ON-resistance and |VGS - VTH|. The relatively high transconductance among the reported diamond MOSFETs with the same gate length could be attributed to the quite low ON-resistance. The evaluated high mobility indicates good interface characteristics between diamond and MoO <sub xmlns:mml=āhttp://www.w3.org/1998/Math/MathMLā xmlns:xlink=āhttp://www.w3.org/1999/xlinkā>3</sub> . However, the saturation drain current is limited at 33 mA/mm by the forward gate breakdown at VGS of around -2 V.