Effect of a radical exposure nitridation surface on the charge stability of shallow nitrogen-vacancy centers in diamond
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2017-04-06 |
| Journal | Applied Physics Express |
| Authors | Taisuke Kageura, Kanami Kato, Hayate Yamano, Evi Suaebah, Miki Kajiya |
| Institutions | Gunma University, Waseda University |
| Citations | 30 |
Abstract
Section titled āAbstractāA nitridation process of a diamond surface with nitrogen radical exposure far from the radio-frequency plasma for the stabilization of a negatively charged nitrogen-vacancy (NVā) centers near the surface is presented. At a nitrogen coverage of as high as 0.9 monolayers, high average Rabi contrasts of 0.40 Ā± 0.06 and 0.46 Ā± 0.03 have been obtained for single NVā centers formed by shallow nitrogen implantation with acceleration voltages of 1 and 2 keV, respectively. This indicates that nitrogen termination by a radical exposure process produces an electric charge state suitable for single NVā centers near the surface compared with the states obtained for alternatively terminated surfaces.