Demonstration of Diamond-Based Schottky p-i-n Diode With Blocking Voltage > 500 V
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2016-07-18 |
| Journal | IEEE Electron Device Letters |
| Authors | Maitreya Dutta, Franz A. Koeck, Raghuraj Hathwar, Stephen M. Goodnick, R. J. Nemanich |
| Institutions | University of California, Davis, Arizona State University |
| Citations | 27 |
Abstract
Section titled āAbstractāDiamond is considered to be the ultimate semiconductor for power devices due to its high breakdown electric field, high carrier mobility, and superior thermal properties. The success of diamond-based electronic devices has been difficult due to critical challenges involved with poor doping efficiency and achievement of ohmic contacts. Achieving n-type diamond has proved to be more difficult over p-type so far. In this letter, we report the achievement of n-type doping in diamond, verified using Hall measurements, which was then used to fabricate Schottky p-i-n diodes measuring a forward current density greater than 300 A/cm <sup xmlns:mml=āhttp://www.w3.org/1998/Math/MathMLā xmlns:xlink=āhttp://www.w3.org/1999/xlinkā>2</sup> at 4 V and breakdown voltage of over 500 V with a 3.5-Ī¼m -thick drift layer. A Silvaco simulation was performed which agreed well with the experimental data showing turn-ON voltage of 1 V and an ideality factor of 1.04, consistent with the model of a p-i-n diode with a fully depleted n-type contact.