Embedded nanotransducer for ultrahigh-frequency SAW utilizing AlN/diamond layered structure
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2017-05-01 |
| Authors | L. Wang, S.M. Chen, Xiaojing Ning, Z. Chen, J.T. Liu |
| Institutions | Institute of Semiconductors, University of Chinese Academy of Sciences |
| Citations | 3 |
Abstract
Section titled āAbstractāIn this work, we report the development and realization of ultrahigh-frequency, high-performance nano interdigital transducers (n-IDTs) for generation of surface acoustic wave (SAW) on aluminum nitride (AlN)/diamond/Si substrates, where the metal fingers are embedded in the AlN film. The well-defined n-IDTsā resolution down to 200 nm were obtained using electron beam lithography, inductively coupled plasma (ICP) etching and lift-off processing. The fabricated SAW resonators exhibit response at a ultrahigh-frequency range, as high as 9.94 GHz, with stronger intensities of S <sub xmlns:mml=āhttp://www.w3.org/1998/Math/MathMLā xmlns:xlink=āhttp://www.w3.org/1999/xlinkā>11</sub> peaks compared with normal transducer devices. The good high-frequency characteristics of the embedded n-IDTs and compatibility with existing fabrication technologies pave the way for the realization of advanced sensors and monolithic integrated MMICs on AlN/diamond/Si substrates for the high frequency and high power applications.