Logic Circuits With Hydrogenated Diamond Field-Effect Transistors
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2017-05-12 |
| Journal | IEEE Electron Device Letters |
| Authors | Jiangwei Liu, Hirotaka Ohsato, Meiyong Liao, Masataka Imura, Eiichiro Watanabe |
| Institutions | National Institute for Materials Science |
| Citations | 72 |
Abstract
Section titled āAbstractāAs a first step to develop a diamond integrated circuit, hydrogenated diamond not and nor logic circuits composed of depletion-mode (D-mode) and enhancement-mode (E-mode) metal-oxide-semiconductor field-effect transistors (MOSFETs) are fabricated. The D- and E-modes MOSFETs act as load and driver devices for the logic circuits, respectively, which provides complementary transistor actions. The extrinsic transconductance maxima for both the MOSFETs are almost the same value of 17 mS mm <sup xmlns:mml=āhttp://www.w3.org/1998/Math/MathMLā xmlns:xlink=āhttp://www.w3.org/1999/xlinkā>-1</sup> and insensitive to device processing. With supply voltage changing from -5 to -25 V, gain maximum for not logic circuit increases from 1.2 to 26.1. The nor logic circuit shows clear nor gate characteristics.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 2012 - Diamond field-effect transistors with 1.3 A/mm drain current density by Al2O3 passivation layer [Crossref]
- 2015 - Wide temperature (10K–700K) and high voltage (~1000V) operation of C-H diamond MOSFETs for power electronics application
- 2014 - Low on-resistance diamond field-effect transistor with high-k ZrO2 as dielectric
- 2016 - Hydrogen-terminated diamond vertical-type metal oxide semiconductor field-effect transistors with a trench gate [Crossref]