3-inch GaN-on-Diamond HEMTs With Device-First Transfer Technology
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2017-08-08 |
| Journal | IEEE Electron Device Letters |
| Authors | Tingting Liu, Yuechan Kong, Lishu Wu, Huaixin Guo, Jianjun Zhou |
| Citations | 87 |
Abstract
Section titled āAbstractāBased on a device-first transfer process, a 3-inch polycrystalline diamond substrate is bonded within 1.5 Ī¼m of the junction in GaN high electron mobility transistors (HEMTs) to enhance heat removal of the high-power RF devices. Highly preserved electrical performance is demonstrated by comparison exactly on the same HEMT device prior and after substrate transfer. The residual compressive strain relaxation of the whole GaN epilayer does not reduce the 2-D electron gas sheet density. The dc characteristics show weakened self-heating in the GaN-on-diamond HEMT with maximum current density increasing from 968 to 1005 mA/mm. The power density increases from 4.8 to 5.5 W/mm with the PAE slightly reducing from 50.9% to 50.5%. On-wafer infrared measurement is performed on a 1.25-mm GaN HEMT at power dissipation of 10 W/mm, and the peak juncture temperature of the device decreases from 241 Ā°C to 191 Ā°C after transferring to the diamond substrate.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 2013 - A new high power GaN-on-diamond HEMT with low-temperature bonded substrate technology
- 2014 - Next generation gallium nitride HEMTs enabled by diamond substrates