Characteristic Luminescence Correlated with Leaky Diamond Schottky Barrier Diodes
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2017-08-23 |
| Journal | physica status solidi (a) |
| Authors | Takehiro Shimaoka, Tokuyuki Teraji, Kenji Watanabe, Satoshi Koizumi |
| Institutions | National Institute for Materials Science |
| Citations | 12 |
Abstract
Section titled âAbstractâThis paper reports correlation between reverse current ( I R ) of diamond Schottky barrier diodes (SBDs) and luminescence feature. pâType vertical SBDs were characterized by current-voltage and cathodoluminescence (CL) measurements. From an exciton image taken at the electrode deposited area, nonâluminescence spots with number density of 10 4 -10 5 cm â2 were confirmed. No marked relation was found between the density of nonâluminescence spots and I R . A larger I R of >10 â5 A was observed when an electrode was deposited on an area that showed bright BandâA luminescence spots in the CL image. In addition, diodes on the beltâshaped luminescence in the Greenâband image showed large I R .